2017년 1월 2일 월요일

ジョレス アルフョーロフ

ジョレス アルフョーロフ

ジョレス アルフョーロフ
Zhores Alferov
Zhores Alferov.jpg
The birth Zhores Ivanovich Alferov
(1930-03-15) 1930March 15(86 years old)
Belarusian flag ベラルーシィーツェプスク

Nationality Russian flag Russia
Research field Applied physics
Main achievements Heterojunction
Main receiving a prize career Nobel Prize in Physics (2000)
A project: Person biography
Nobel Prize winnerThe Nobel Prize
The receiving a prize year: 2000
A receiving a prize section: Nobel Prize in Physics
A receiving a prize reason: Development of the semiconductor heterostructure used to high-speed electronics and light electronics

ジョレス Ivanovici アルフョーロフ [1] (Russian :Жоре́сИва́новичАлфёров ジァリェース イヴァーノヴィチ アルフョーラフ, example :Zhores Ivanovich Alferov, March 15, 1930 of the Roman letters transcription – ) is the Russian physicist who left great contribution in physics of the heterojunction.

Table of contents

Summary

I was born in the family who attracted a Russian and a Jewish family in ヴィーツェプスク of Byelorussia S.S.R. (Belarus). In 1952, he graduated from Lenin electronic technique research institute of Leningrad. I got a job in ヨッフェ physics institute of technology of the Soviet Union science academy from 1953 and got some degrees at this research institute. I became the candidate of the engineering degree in 1961 and acquired a doctorate of physics and the mathematics in 1970. Until 1987, I acted as the supervision of this research institute. I was chosen as the supporting member of the Soviet Union science academy in 1972 and was chosen as a regular member in 1979. I act as the center head of a vice-chairperson and the St. Petersburg science center of the Russian scientific academy from 1989. I belonged to the Russian Federation Communist Party from 1995, and I was elected by Russian Federal Congress Upper House Council of the Union delegate. Nobel Prize in Physics was conferred on high-speed electronics and light electronics with Herbert Kroemer in 2000 by an achievement of the development of the used semiconductor heterostructure.

Study domain

I am engaged in the study of the heterojunction semiconductor from 1962. He devised a shape of the injection and improved a laser, a solar battery, LED and left achievements such as studying the epitaxial growth.

I it in a receiving a prize career

 
アルフョーロフ (the left) and the President of Vladimir Putin Russia (2000)

Others

Footnote

[Help]
  1. I am often written as アルフェロフ in ^ Japanese.

This article is taken from the Japanese Wikipedia ジョレス アルフョーロフ

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