2018년 1월 25일 목요일

Self-organized lithography

Self-organized lithography

Self-organized lithography(Directed Self- Assembly, DSA) is expected to be the next generation by using a self-organization phenomenon of block copolymer.

table of contents

Overview

Although the degree of integration has improved year by year according to the past, technology has been getting closer to the limit in recent years, and it is becoming impossible to absorb the cost associated with the improvement of the degree of integration due to the increase in cost in the past. For this reason, technology is required and self-organized lithography can be patterned only by coating, annealing, and development, so it is expected to be a next-generation semiconductor manufacturing technology. Technology is a method of spontaneously expressing having an ordered structure by skillful control of 0 0 0

The linked diblock copolymers undergo microphase separation due to intermolecular assembly of the same polymer components and the interfacial curvature at aggregation changes depending on the molecular chain length ratio (f) between the two polymer components , A spherical structure, a cylinder structure, a gyroid structure, and a lamellar structure, and this ordered structure is suitable for semiconductor fine patterning.

Merit

  • It does not require expensive equipment like *.
  • A pattern can be formed in a shorter time than *.

Disadvantage

  • There is a problem in process control, etc. to be mass-produced technology, and it has not been put into practical use.

Task

The DSA pattern on a 300 mm wafer has already been prototyped at the research and development level, but it is used for the preparation of a template necessary for pattern formation, so there is a limit to the resolution and shape control of the template.

Use

  • It is expected as a next generation semiconductor manufacturing technology capable of fine patterning after 20 nm.

Related item

footnote

1. ^ "()". Viewed October 8, 2016. 2. ****Naoko Kihara. "" Toshiba Review 67.4 (2012): 44-47. 3. ^ Iwai Seminar, Akira Sugita, Yoshiki Nikagori "" JSR Technical Review 119 (2012): 7-13. 4. ^

References

  • Shiratori Kiyo. "" Applied Physics 69.5 (2000): 553-557.
  • Shimomura Masatsugu "Can we create devices by self-organization of molecules? (Special issue: Nanotechnology developed by chemistry)" Chemistry 57.1 (2002): 17-20.
  • Nakamura Masakazu, et al. "" Surface Science 24.2 (2003): 77-82.
  • Hayakawa Akira. "Development of new self-organized lithographic materials with silsesquioxane-containing block copolymers" Journal of Network Polymer, Japan 32.5 (2011): 268-275.
  • Yuriko Seino, et al. "" Journal of the Institute of Electrical Engineers. A 133.10 (2013): 532-536.
  • Noritsuki Sasao. "" Toshiba Review 68.8 (2013).

External link

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Acquired from ""

Post Date : 2018-01-25 10:30

This article is taken from the Japanese Wikipedia Self-organized lithography

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